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231224s2011 xx |||||o 00| ||eng c |
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|a eng
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|a Lee, Jang-Sik
|e verfasserin
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|a Multilevel data storage memory devices based on the controlled capacitive coupling of trapped electrons
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|c 2011
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|a Text
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|a ƒaComputermedien
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|a Date Completed 26.08.2011
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|a Date Revised 30.09.2020
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|a published: Print-Electronic
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|a Kim, Yong-Mu
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|a Kwon, Jeong-Hwa
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| 700 |
1 |
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|a Sim, Jae Sung
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Shin, Hyunjung
|e verfasserin
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| 700 |
1 |
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|a Sohn, Byeong-Hyeok
|e verfasserin
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| 700 |
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|a Jia, Quanxi
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|4 aut
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|t Advanced materials (Deerfield Beach, Fla.)
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|g volume:23
|g year:2011
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