Electric-field-induced resistive switching in a family of mott insulators Towards a new class of RRAM memories

Electric-field-induced resistive switching in a family of mott insulators : Towards a new class of RRAM memories

Détails bibliographiques
Publié dans:Advanced materials (Deerfield Beach, Fla.). - 1998. - 22(2010), 45 vom: 01. Dez., Seite 5193-7
Auteur principal: Cario, Laurent (Auteur)
Autres auteurs: Vaju, Cristian, Corraze, Benoit, Guiot, Vincent, Janod, Etienne
Format: Article en ligne
Langue:English
Publié: 2010
Accès à la collection:Advanced materials (Deerfield Beach, Fla.)
Sujets:Journal Article Research Support, Non-U.S. Gov't Germanium 00072J7XWS Niobium 05175J654G Tantalum 6424HBN274 Gallium CH46OC8YV4 plus... Selenium H6241UJ22B
Description
Description:Date Completed 24.03.2011
Date Revised 30.09.2020
published: Print
Citation Status MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.201002521