Organic nonvolatile memory devices based on ferroelectricity
A memory functionality is a prerequisite for many applications of electronic devices. Organic nonvolatile memory devices based on ferroelectricity are a promising approach toward the development of a low-cost memory technology. In this Review Article we discuss the latest developments in this area w...
| Publié dans: | Advanced materials (Deerfield Beach, Fla.). - 1998. - 22(2010), 9 vom: 05. März, Seite 933-45 |
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| Auteur principal: | |
| Autres auteurs: | , , , |
| Format: | Article en ligne |
| Langue: | English |
| Publié: |
2010
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| Accès à la collection: | Advanced materials (Deerfield Beach, Fla.) |
| Sujets: | Journal Article Research Support, Non-U.S. Gov't Review Organic Chemicals |
| Résumé: | A memory functionality is a prerequisite for many applications of electronic devices. Organic nonvolatile memory devices based on ferroelectricity are a promising approach toward the development of a low-cost memory technology. In this Review Article we discuss the latest developments in this area with a focus on three of the most important device concepts: ferroelectric capacitors, field-effect transistors, and diodes. Integration of these devices into larger memory arrays is also discussed |
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| Description: | Date Completed 03.05.2010 Date Revised 22.02.2021 published: Print Citation Status MEDLINE |
| ISSN: | 1521-4095 |
| DOI: | 10.1002/adma.200900759 |