Organic nonvolatile memory devices based on ferroelectricity

A memory functionality is a prerequisite for many applications of electronic devices. Organic nonvolatile memory devices based on ferroelectricity are a promising approach toward the development of a low-cost memory technology. In this Review Article we discuss the latest developments in this area w...

Ausführliche Beschreibung

Bibliographische Detailangaben
Veröffentlicht in:	Advanced materials (Deerfield Beach, Fla.). - 1998. - 22(2010), 9 vom: 05. März, Seite 933-45
1. Verfasser:	Naber, Ronald C G (VerfasserIn)
Weitere Verfasser:	Asadi, Kamal, Blom, Paul W M, de Leeuw, Dago M, de Boer, Bert
Format:	Online-Aufsatz
Sprache:	English
Veröffentlicht:	2010
Zugriff auf das übergeordnete Werk:	Advanced materials (Deerfield Beach, Fla.)
Schlagworte:	Journal Article Research Support, Non-U.S. Gov't Review Organic Chemicals

Beschreibung
Zusammenfassung:	A memory functionality is a prerequisite for many applications of electronic devices. Organic nonvolatile memory devices based on ferroelectricity are a promising approach toward the development of a low-cost memory technology. In this Review Article we discuss the latest developments in this area with a focus on three of the most important device concepts: ferroelectric capacitors, field-effect transistors, and diodes. Integration of these devices into larger memory arrays is also discussed
Beschreibung:	Date Completed 03.05.2010 Date Revised 22.02.2021 published: Print Citation Status MEDLINE
ISSN:	1521-4095
DOI:	10.1002/adma.200900759