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231223s2010 xx |||||o 00| ||eng c |
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|a 10.1002/adma.200900759
|2 doi
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|a eng
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|a Naber, Ronald C G
|e verfasserin
|4 aut
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|a Organic nonvolatile memory devices based on ferroelectricity
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|c 2010
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|a Text
|b txt
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|a ƒaComputermedien
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|a ƒa Online-Ressource
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|a Date Completed 03.05.2010
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|a Date Revised 22.02.2021
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|a published: Print
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|a Citation Status MEDLINE
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|a A memory functionality is a prerequisite for many applications of electronic devices. Organic nonvolatile memory devices based on ferroelectricity are a promising approach toward the development of a low-cost memory technology. In this Review Article we discuss the latest developments in this area with a focus on three of the most important device concepts: ferroelectric capacitors, field-effect transistors, and diodes. Integration of these devices into larger memory arrays is also discussed
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|a Journal Article
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|a Research Support, Non-U.S. Gov't
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|a Review
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|a Organic Chemicals
|2 NLM
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|a Asadi, Kamal
|e verfasserin
|4 aut
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|a Blom, Paul W M
|e verfasserin
|4 aut
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|a de Leeuw, Dago M
|e verfasserin
|4 aut
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|a de Boer, Bert
|e verfasserin
|4 aut
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 22(2010), 9 vom: 05. März, Seite 933-45
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