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231223s2010 xx |||||o 00| ||eng c |
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|a 10.1109/TUFFC.2010.1443
|2 doi
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|a eng
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|a Lin, Chih-Ming
|e verfasserin
|4 aut
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|a Temperature-compensated aluminum nitride lamb wave resonators
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|c 2010
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|a Text
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|a ƒaComputermedien
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|a ƒa Online-Ressource
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|a Date Completed 18.06.2010
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|a Date Revised 09.03.2010
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|a published: Print
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|a Citation Status PubMed-not-MEDLINE
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|a In this paper, the temperature compensation of AlN Lamb wave resonators using edge-type reflectors is theoretically studied and experimentally demonstrated. By adding a compensating layer of SiO2 with an appropriate thickness, a Lamb wave resonator based on a stack of AlN and SiO2 layers can achieve a zero first-order temperature coefficient of frequency (TCF). Using a composite membrane consisting of 1 microm AlN and 0.83 microm SiO2, a Lamb wave resonator operating at 711 MHz exhibits a first-order TCF of -0.31 ppm/degrees C and a second-order TCF of -22.3 ppb/degrees C(2) at room temperature. The temperature-dependent fractional frequency variation is less than 250 ppm over a wide temperature range from -55 degrees C to 125 degrees C. This temperature-compensated AlN Lamb wave resonator is promising for future applications including thermally stable oscillators, filters, and sensors
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|a Journal Article
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|a Yen, Ting-Ta
|e verfasserin
|4 aut
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|a Lai, Yun-Ju
|e verfasserin
|4 aut
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|a Felmetsger, Valery V
|e verfasserin
|4 aut
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|a Hopcroft, Matthew A
|e verfasserin
|4 aut
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|a Kuypers, Jan H
|e verfasserin
|4 aut
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|a Pisano, Albert P
|e verfasserin
|4 aut
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|i Enthalten in
|t IEEE transactions on ultrasonics, ferroelectrics, and frequency control
|d 1986
|g 57(2010), 3 vom: 01. März, Seite 524-32
|w (DE-627)NLM098181017
|x 1525-8955
|7 nnas
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| 773 |
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|g volume:57
|g year:2010
|g number:3
|g day:01
|g month:03
|g pages:524-32
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|u http://dx.doi.org/10.1109/TUFFC.2010.1443
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