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231223s2010 xx |||||o 00| ||eng c |
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|a 10.1109/TUFFC.2010.1374
|2 doi
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|a pubmed24n0647.xml
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|a eng
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|a Olivares, Jimena
|e verfasserin
|4 aut
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|a Sputtered SiO2 as low acoustic impedance material for Bragg mirror fabrication in BAW resonators
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|c 2010
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
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|a Date Completed 10.03.2010
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|a Date Revised 30.12.2009
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|a published: Print
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|a Citation Status MEDLINE
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|a In this paper we describe the procedure to sputter low acoustic impedance SiO(2) films to be used as a low acoustic impedance layer in Bragg mirrors for BAW resonators. The composition and structure of the material are assessed through infrared absorption spectroscopy. The acoustic properties of the films (mass density and sound velocity) are assessed through X-ray reflectometry and picosecond acoustic spectroscopy. A second measurement of the sound velocity is achieved through the analysis of the longitudinal lambda/2 resonance that appears in these silicon oxide films when used as uppermost layer of an acoustic reflector placed under an AlN-based resonator
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|a Journal Article
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|a Research Support, Non-U.S. Gov't
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|a Silicon Dioxide
|2 NLM
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|a 7631-86-9
|2 NLM
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| 700 |
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|a Wegmann, Enrique
|e verfasserin
|4 aut
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|a Capilla, José
|e verfasserin
|4 aut
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|a Iborra, Enrique
|e verfasserin
|4 aut
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|a Clement, Marta
|e verfasserin
|4 aut
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|a Vergara, Lucía
|e verfasserin
|4 aut
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|a Aigner, Robert
|e verfasserin
|4 aut
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|i Enthalten in
|t IEEE transactions on ultrasonics, ferroelectrics, and frequency control
|d 1986
|g 57(2010), 1 vom: 19. Jan., Seite 23-9
|w (DE-627)NLM098181017
|x 1525-8955
|7 nnns
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| 773 |
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|g volume:57
|g year:2010
|g number:1
|g day:19
|g month:01
|g pages:23-9
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|u http://dx.doi.org/10.1109/TUFFC.2010.1374
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