Highly efficient damage-free correction of thickness distribution of quartz crystal wafers by atmospheric pressure plasma etching
A new finishing method was developed to correct the thickness distribution of a quartz crystal wafer by the numerically controlled scanning of a localized atmospheric pressure plasma. The thickness uniformity level of a commercially available AT-cut quartz crystal wafer was improved to less than 50...
Ausführliche Beschreibung
Bibliographische Detailangaben
Veröffentlicht in: | IEEE transactions on ultrasonics, ferroelectrics, and frequency control. - 1986. - 56(2009), 6 vom: 15. Juni, Seite 1128-30
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1. Verfasser: |
Yamamura, Kazuya
(VerfasserIn) |
Weitere Verfasser: |
Morikawa, Tetsuya,
Ueda, Masaki,
Nagano, Mikinori,
Zettsu, Nobuyuki,
Shibahara, Masafumi |
Format: | Online-Aufsatz
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Sprache: | English |
Veröffentlicht: |
2009
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Zugriff auf das übergeordnete Werk: | IEEE transactions on ultrasonics, ferroelectrics, and frequency control
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Schlagworte: | Letter
Research Support, Non-U.S. Gov't
Gases
Quartz
14808-60-7 |