Highly efficient damage-free correction of thickness distribution of quartz crystal wafers by atmospheric pressure plasma etching

A new finishing method was developed to correct the thickness distribution of a quartz crystal wafer by the numerically controlled scanning of a localized atmospheric pressure plasma. The thickness uniformity level of a commercially available AT-cut quartz crystal wafer was improved to less than 50...

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Bibliographische Detailangaben
Veröffentlicht in:IEEE transactions on ultrasonics, ferroelectrics, and frequency control. - 1986. - 56(2009), 6 vom: 15. Juni, Seite 1128-30
1. Verfasser: Yamamura, Kazuya (VerfasserIn)
Weitere Verfasser: Morikawa, Tetsuya, Ueda, Masaki, Nagano, Mikinori, Zettsu, Nobuyuki, Shibahara, Masafumi
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2009
Zugriff auf das übergeordnete Werk:IEEE transactions on ultrasonics, ferroelectrics, and frequency control
Schlagworte:Letter Research Support, Non-U.S. Gov't Gases Quartz 14808-60-7