Highly efficient damage-free correction of thickness distribution of quartz crystal wafers by atmospheric pressure plasma etching
A new finishing method was developed to correct the thickness distribution of a quartz crystal wafer by the numerically controlled scanning of a localized atmospheric pressure plasma. The thickness uniformity level of a commercially available AT-cut quartz crystal wafer was improved to less than 50...
| Veröffentlicht in: | IEEE transactions on ultrasonics, ferroelectrics, and frequency control. - 1986. - 56(2009), 6 vom: 15. Juni, Seite 1128-30 |
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| 1. Verfasser: | |
| Weitere Verfasser: | , , , , |
| Format: | Online-Aufsatz |
| Sprache: | English |
| Veröffentlicht: |
2009
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| Zugriff auf das übergeordnete Werk: | IEEE transactions on ultrasonics, ferroelectrics, and frequency control |
| Schlagworte: | Letter Research Support, Non-U.S. Gov't Gases Quartz 14808-60-7 |
| Zusammenfassung: | A new finishing method was developed to correct the thickness distribution of a quartz crystal wafer by the numerically controlled scanning of a localized atmospheric pressure plasma. The thickness uniformity level of a commercially available AT-cut quartz crystal wafer was improved to less than 50 nm without any subsurface damage by applying one correction process. Furthermore, applying a pulse-modulated plasma markedly decreased the correction time of the thickness distribution without breaking the quartz crystal wafer by thermal stress |
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| Beschreibung: | Date Completed 07.10.2009 Date Revised 03.07.2009 published: Print Citation Status MEDLINE |
| ISSN: | 1525-8955 |
| DOI: | 10.1109/TUFFC.2009.1153 |