Suitability of surface acoustic wave oscillators fabricated using low temperature-grown AlN films on GaN/sapphire as UV sensors
Epitaxial AlN films were prepared on GaN/sapphire using a helicon sputtering system at the low temperature of 300 degrees C. Surface acoustic wave (SAW) devices fabricated on AlN/GaN/sapphire exhibited superior characteristics compared with those made on GaN/sapphire. An oscillator using an AlN/GaN/...
Ausführliche Beschreibung
Bibliographische Detailangaben
| Veröffentlicht in: | IEEE transactions on ultrasonics, ferroelectrics, and frequency control. - 1986. - 55(2008), 2 vom: 01. Feb., Seite 489-93
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| 1. Verfasser: |
Chen, Tzu Chieh
(VerfasserIn) |
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| Weitere Verfasser: |
Lin, Yueh Ting,
Lin, Chung Yi,
Chen, W C,
Chen, Meei Ru,
Kao, Hui-Ling,
Chyi, J I,
Hsu, C H |
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| Format: | Online-Aufsatz
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| Sprache: | English |
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| Veröffentlicht: |
2008
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| Zugriff auf das übergeordnete Werk: | IEEE transactions on ultrasonics, ferroelectrics, and frequency control
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| Schlagworte: | Letter |
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