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231223s2008 xx |||||o 00| ||eng c |
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|a 10.1109/TUFFC.2008.662
|2 doi
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|a eng
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|a Brizoual, Laurent Le
|e verfasserin
|4 aut
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|a GHz frequency ZnO/Si SAW device
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|c 2008
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Completed 16.04.2008
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|a Date Revised 12.03.2008
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|a published: Print
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|a Citation Status PubMed-not-MEDLINE
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|a The demand for high-frequency low-loss filters generates intensive research on innovative wave guide solutions. In this work, a GHz SAW device based on a ZnO/Si structure was fabricated using classical UV photolithography. The thickness of the piezoelectric thin film was optimized and a specific interdigital transducer structure was used to generate third and fifth harmonic guided waves at 2.5 GHz and 3.5 GHz, respectively, with an aluminum strip larger than 1 micrometer. Different modes have been measured and theoretically identified thanks to an advanced finite-element/boundary-elementbased model. Good agreement is found between theory and experiments. The high-frequency modes have been fully characterized, allowing for accurate design of SAW devices exploiting such modes
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|a Journal Article
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|a Sarry, Frederic
|e verfasserin
|4 aut
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|a Elmazria, Omar
|e verfasserin
|4 aut
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1 |
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|a Alnot, Patrick
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Ballandras, Sylvain
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Pastureaud, Thomas
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t IEEE transactions on ultrasonics, ferroelectrics, and frequency control
|d 1986
|g 55(2008), 2 vom: 01. Feb., Seite 442-50
|w (DE-627)NLM098181017
|x 1525-8955
|7 nnns
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|g volume:55
|g year:2008
|g number:2
|g day:01
|g month:02
|g pages:442-50
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|u http://dx.doi.org/10.1109/TUFFC.2008.662
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