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|a eng
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|a Hong, Junsic
|e verfasserin
|4 aut
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|a ALD resist formed by vapor-deposited self-assembled monolayers
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|c 2007
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|a Text
|b txt
|2 rdacontent
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|a ohne Hilfsmittel zu benutzen
|b n
|2 rdamedia
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|a Band
|b nc
|2 rdacarrier
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|a Date Completed 28.02.2007
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|a Date Revised 23.01.2007
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|a published: Print
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|a Citation Status PubMed-not-MEDLINE
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|a A new process of applying molecular resists to block HfO2 and Pt atomic layer deposition has been investigated. Monolayer films are formed from octadecyltrichlorosilane (ODTS) or tridecafluoro-1,1,2,2-tetrahydrooctyltrichlorosilane (FOTS) and water vapor on native silicon oxide surfaces and from 1-octadecene on hydrogen-passivated silicon surfaces through a low-pressure chemical vapor deposition process. X-ray photoelectron spectroscopy data indicates that surfaces blocked by these monolayer resists can prevent atomic layer deposition of both HfO2 and Pt successfully. Time-dependent studies show that the ODTS monolayers continue to improve in blocking ability for as long as 48 h of formation time, and infrared spectroscopy measurements confirm an evolution of packing order over these time scales
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|a Journal Article
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|a Porter, David W
|e verfasserin
|4 aut
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|a Sreenivasan, Raghavasimhan
|e verfasserin
|4 aut
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|a McIntyre, Paul C
|e verfasserin
|4 aut
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| 700 |
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|a Bent, Stacey F
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Langmuir : the ACS journal of surfaces and colloids
|d 1992
|g 23(2007), 3 vom: 30. Jan., Seite 1160-5
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|x 1520-5827
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|g volume:23
|g year:2007
|g number:3
|g day:30
|g month:01
|g pages:1160-5
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