ALD resist formed by vapor-deposited self-assembled monolayers
A new process of applying molecular resists to block HfO2 and Pt atomic layer deposition has been investigated. Monolayer films are formed from octadecyltrichlorosilane (ODTS) or tridecafluoro-1,1,2,2-tetrahydrooctyltrichlorosilane (FOTS) and water vapor on native silicon oxide surfaces and from 1-o...
| Veröffentlicht in: | Langmuir : the ACS journal of surfaces and colloids. - 1992. - 23(2007), 3 vom: 30. Jan., Seite 1160-5 |
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| Weitere Verfasser: | , , , |
| Format: | Aufsatz |
| Sprache: | English |
| Veröffentlicht: |
2007
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| Zugriff auf das übergeordnete Werk: | Langmuir : the ACS journal of surfaces and colloids |
| Schlagworte: | Journal Article |
| Zusammenfassung: | A new process of applying molecular resists to block HfO2 and Pt atomic layer deposition has been investigated. Monolayer films are formed from octadecyltrichlorosilane (ODTS) or tridecafluoro-1,1,2,2-tetrahydrooctyltrichlorosilane (FOTS) and water vapor on native silicon oxide surfaces and from 1-octadecene on hydrogen-passivated silicon surfaces through a low-pressure chemical vapor deposition process. X-ray photoelectron spectroscopy data indicates that surfaces blocked by these monolayer resists can prevent atomic layer deposition of both HfO2 and Pt successfully. Time-dependent studies show that the ODTS monolayers continue to improve in blocking ability for as long as 48 h of formation time, and infrared spectroscopy measurements confirm an evolution of packing order over these time scales |
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| Beschreibung: | Date Completed 28.02.2007 Date Revised 23.01.2007 published: Print Citation Status PubMed-not-MEDLINE |
| ISSN: | 1520-5827 |