Investigation of layered structure SAW devices fabricated using low temperature grown AlN thin film on GaN/sapphire
Epitaxial AlN films have been grown on GaN/sapphire using helicon sputtering at 300 degrees C. The surface acoustic wave (SAW) filters fabricated on AlN/GaN/sapphire exhibit more superior characteristics than those made on GaN/sapphire. This composite structure of AlN on GaN may bring about the deve...
| Publié dans: | IEEE transactions on ultrasonics, ferroelectrics, and frequency control. - 1999. - 52(2005), 5 vom: 14. Mai, Seite 923-6 |
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| Auteur principal: | |
| Autres auteurs: | , , , , , |
| Format: | Article |
| Langue: | English |
| Publié: |
2005
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| Accès à la collection: | IEEE transactions on ultrasonics, ferroelectrics, and frequency control |
| Sujets: | Letter |
| Résumé: | Epitaxial AlN films have been grown on GaN/sapphire using helicon sputtering at 300 degrees C. The surface acoustic wave (SAW) filters fabricated on AlN/GaN/sapphire exhibit more superior characteristics than those made on GaN/sapphire. This composite structure of AlN on GaN may bring about the development of high-frequency components, which integrate and use their semiconducting, optoelectronic, and piezoelectric properties |
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| Description: | Date Completed 23.08.2005 Date Revised 17.09.2019 published: Print Citation Status PubMed-not-MEDLINE |
| ISSN: | 0885-3010 |