Investigation of layered structure SAW devices fabricated using low temperature grown AlN thin film on GaN/sapphire
Epitaxial AlN films have been grown on GaN/sapphire using helicon sputtering at 300 degrees C. The surface acoustic wave (SAW) filters fabricated on AlN/GaN/sapphire exhibit more superior characteristics than those made on GaN/sapphire. This composite structure of AlN on GaN may bring about the deve...
| Veröffentlicht in: | IEEE transactions on ultrasonics, ferroelectrics, and frequency control. - 1999. - 52(2005), 5 vom: 14. Mai, Seite 923-6 |
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| 1. Verfasser: | |
| Weitere Verfasser: | , , , , , |
| Format: | Aufsatz |
| Sprache: | English |
| Veröffentlicht: |
2005
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| Zugriff auf das übergeordnete Werk: | IEEE transactions on ultrasonics, ferroelectrics, and frequency control |
| Schlagworte: | Letter |