Investigation of layered structure SAW devices fabricated using low temperature grown AlN thin film on GaN/sapphire

Investigation of layered structure SAW devices fabricated using low temperature grown AlN thin film on GaN/sapphire

Epitaxial AlN films have been grown on GaN/sapphire using helicon sputtering at 300 degrees C. The surface acoustic wave (SAW) filters fabricated on AlN/GaN/sapphire exhibit more superior characteristics than those made on GaN/sapphire. This composite structure of AlN on GaN may bring about the deve...

Ausführliche Beschreibung

Bibliographische Detailangaben
Veröffentlicht in:IEEE transactions on ultrasonics, ferroelectrics, and frequency control. - 1999. - 52(2005), 5 vom: 14. Mai, Seite 923-6
1. Verfasser: Lin, Hui-Feng (VerfasserIn)
Weitere Verfasser: Wu, Chun-Te, Chien, Wei-Cheng, Chen, Sheng-Wen, Kao, Hui-Ling, Chyi, Jen-Inn, Chen, Jyh-Shin
Format: Aufsatz
Sprache:English
Veröffentlicht: 2005
Zugriff auf das übergeordnete Werk:IEEE transactions on ultrasonics, ferroelectrics, and frequency control
Schlagworte:Letter
Beschreibung
Zusammenfassung:Epitaxial AlN films have been grown on GaN/sapphire using helicon sputtering at 300 degrees C. The surface acoustic wave (SAW) filters fabricated on AlN/GaN/sapphire exhibit more superior characteristics than those made on GaN/sapphire. This composite structure of AlN on GaN may bring about the development of high-frequency components, which integrate and use their semiconducting, optoelectronic, and piezoelectric properties
Beschreibung:Date Completed 23.08.2005
Date Revised 17.09.2019
published: Print
Citation Status PubMed-not-MEDLINE
ISSN:0885-3010