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231223s1998 xx ||||| 00| ||eng c |
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|a pubmed25n0498.xml
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|a (DE-627)NLM149471645
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|a (NLM)15263745
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|a DE-627
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|c DE-627
|e rakwb
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|a eng
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| 100 |
1 |
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|a Ofuchi, H
|e verfasserin
|4 aut
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|a Local structure study of dilute Er in III-V semiconductors by fluorescence EXAFS
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|c 1998
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|a Text
|b txt
|2 rdacontent
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|a ohne Hilfsmittel zu benutzen
|b n
|2 rdamedia
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|a Band
|b nc
|2 rdacarrier
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|a Date Completed 02.10.2012
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|a Date Revised 20.07.2004
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a For understanding the luminescence of Er atoms in III-V semiconductors, OMVPE-grown InP doped with Er has been investigated by fluorescence EXAFS (extended X-ray absorption fine structure) in order to study the local structure around Er atoms. The local structures around the Er atoms doped in InP, with doping as dilute as 3 x 10(12) Er atoms in a 1.5 mm x 1.0 mm spot, were successfully measured by fluorescence EXAFS. The EXAFS analysis revealed that the Er atoms doped in InP above 853 K (which showed low luminescence) formed the rock-salt-structure ErP, while the Er atoms doped in InP below 823 K (which showed high luminescence) substituted on the In site of InP. The dependence of the local structure on growth temperature was observed for the samples doped with 3 x 10(12) atoms and 1.2 x 10(13) atoms of Er
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|a Journal Article
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1 |
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|a Kawamura, D
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Tsuchiya, J
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Matsubara, N
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Tabuchi, M
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Fujiwara, Y
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Takeda, Y
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Journal of synchrotron radiation
|d 1998
|g 5(1998), Pt 3 vom: 01. Mai, Seite 1061-3
|w (DE-627)NLM09824129X
|x 0909-0495
|7 nnns
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| 773 |
1 |
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|g volume:5
|g year:1998
|g number:Pt 3
|g day:01
|g month:05
|g pages:1061-3
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|a GBV_ILN_2005
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|a AR
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|d 5
|j 1998
|e Pt 3
|b 01
|c 05
|h 1061-3
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