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231222s1989 xx ||||| 00| ||eng c |
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|a eng
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|a Aldao
|e verfasserin
|4 aut
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| 245 |
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|a Disruption, atom distributions, and energy levels for Ge/GaAs(110), Ge/InP(110), and Ge/InSb(110) heterojunctions
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| 264 |
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|c 1989
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| 336 |
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|a Text
|b txt
|2 rdacontent
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|a ohne Hilfsmittel zu benutzen
|b n
|2 rdamedia
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| 338 |
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|a Band
|b nc
|2 rdacarrier
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| 500 |
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|a Date Revised 20.11.2019
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|a published: Print
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|a Citation Status PubMed-not-MEDLINE
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| 650 |
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|a Journal Article
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|a Vitomirov
|e verfasserin
|4 aut
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| 700 |
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|a Xu
|e verfasserin
|4 aut
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| 700 |
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|a Weaver
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Physical review. B, Condensed matter
|d 1985
|g 40(1989), 6 vom: 15. Aug., Seite 3711-3719
|w (DE-627)NLM098137042
|x 0163-1829
|7 nnns
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| 773 |
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|g volume:40
|g year:1989
|g number:6
|g day:15
|g month:08
|g pages:3711-3719
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|a AR
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|d 40
|j 1989
|e 6
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|h 3711-3719
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