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|a Dopant concentration dependences and symmetric Fermi-level movement for metal/n-type and p-type GaAs(110) interfaces formed at 60 K
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|c 1989
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|a Text
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|a ohne Hilfsmittel zu benutzen
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|a Date Revised 20.11.2019
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|a published: Print
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|a Citation Status PubMed-not-MEDLINE
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|a Journal Article
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|i Enthalten in
|t Physical review. B, Condensed matter
|d 1985
|g 39(1989), 17 vom: 15. Juni, Seite 12977-12980
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|x 0163-1829
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|g volume:39
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