High Mobilities in Layered InSe Transistors with Indium-Encapsulation-Induced Surface Charge Doping

von Li, Mengjiao
Veröffentlicht in: Advanced materials (Deerfield Beach, Fla.) (2018)

Reversible and Precisely Controllable p/n-Type Doping of MoTe2 Transistors through Electrothermal Doping

von Chang, Yuan-Ming
Veröffentlicht in: Advanced materials (Deerfield Beach, Fla.) (2018)

Origin of Noise in Layered MoTe₂ Transistors and its Possible Use for Environmental Sensors

von Lin, Yen-Fu
Veröffentlicht in: Advanced materials (Deerfield Beach, Fla.) (2015)