Heterojunction-Driven Stochasticity : Bi-Heterojunction Noise-Enhanced Negative Transconductance Transistor in Image Generation

© 2025 The Author(s). Advanced Materials published by Wiley‐VCH GmbH.

Détails bibliographiques
Publié dans:Advanced materials (Deerfield Beach, Fla.). - 1998. - 37(2025), 41 vom: 17. Okt., Seite e2505150
Auteur principal: Han, Youngmin (Auteur)
Autres auteurs: Koo, Ryun-Han, Song, Jaechan, Kim, Chang-Hyun, Lee, Eun Kwang, Shin, Wonjun, Yoo, Hocheon
Format: Article en ligne
Langue:English
Publié: 2025
Accès à la collection:Advanced materials (Deerfield Beach, Fla.)
Sujets:Journal Article Bi‐heterojunction low‐frequency noise multi‐valued logic negative transconductance noise enhancement stochastic electronics