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|a 10.1002/adma.202510643
|2 doi
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|a pubmed25n1581.xml
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|a (DE-627)NLM393107272
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|a (NLM)41001969
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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|a Chen, Shikai
|e verfasserin
|4 aut
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|a Near-Unity Quantum Yield Conductive Inks of Lead-Free Double Perovskite Quantum Dots for White LEDs
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|c 2025
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Revised 26.09.2025
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|a published: Print-Electronic
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|a Citation Status Publisher
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|a © 2025 Wiley‐VCH GmbH.
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|a Double perovskite quantum dots (QDs) with self-trapped exciton emission provide an eco-friendly route to broadband white-light generation. Yet severe charge losses arising from trap-mediated recombination and inefficient carrier transport remain major obstacles to their integration into electroluminescent devices. Here, Sb3+/Mn2+ co-doped Cs2NaInCl6 QD inks are reported that enable the fabrication of defect-suppressed, conductive QD films with low charge transport and hole-injection barriers in light-emitting diode (LED) devices. Sb3+/Mn2+ co-doping not only induces white emission but also suppresses cation disorder, leading to near-unity photoluminescence quantum yield. Moreover, replacing long-chain ligands with short-chain 2-ethylhexanoic acid and 3,3-diphenylpropylamine chloride enhances the film conductivity by nearly 20-fold and induces a favorable band alignment with the poly(9-vinylcarbazole):poly[N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)-benzidine] hole transport layer, hereby reducing the injection barrier by 0.4 eV. These improvements enable an LED external quantum efficiency of 0.91% (0.05 cm2)-the highest reported for double perovskite QDs and nearly 1.3 the previous record. It is anticipated that this work provides a viable route toward overcoming the key limitations of double perovskite electroluminescence and advancing eco-friendly solid-state lighting
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|a Journal Article
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|a double perovskite
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|a light‐emitting diodes
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|a quantum dot inks
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|a self‐trapped exciton
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|a short‐chain ligand
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|a Wang, Dandan
|e verfasserin
|4 aut
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|a Wei, Yuyao
|e verfasserin
|4 aut
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|a Li, Yusheng
|e verfasserin
|4 aut
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|a Yang, Yongge
|e verfasserin
|4 aut
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|a Ji, Sujun
|e verfasserin
|4 aut
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|a Guo, Yao
|e verfasserin
|4 aut
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|a Liu, Dong
|e verfasserin
|4 aut
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|a Xia, Jing
|e verfasserin
|4 aut
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1 |
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|a Bì, Huān
|e verfasserin
|4 aut
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1 |
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|a Liu, Jiaqi
|e verfasserin
|4 aut
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1 |
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|a Shi, Guozheng
|e verfasserin
|4 aut
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|a Tosa, Keita
|e verfasserin
|4 aut
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|a Yang, Zhao
|e verfasserin
|4 aut
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|a Wen, Ziying
|e verfasserin
|4 aut
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|a Zhang, Boyu
|e verfasserin
|4 aut
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|a Li, Hua
|e verfasserin
|4 aut
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|a Li, Qiao
|e verfasserin
|4 aut
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|a Xue, Junpeng
|e verfasserin
|4 aut
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|a Liu, Feng
|e verfasserin
|4 aut
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|a Zhang, Yaohong
|e verfasserin
|4 aut
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|a Hayase, Shuzi
|e verfasserin
|4 aut
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|a Shen, Qing
|e verfasserin
|4 aut
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773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g (2025) vom: 26. Sept., Seite e10643
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnas
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|g year:2025
|g day:26
|g month:09
|g pages:e10643
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|u http://dx.doi.org/10.1002/adma.202510643
|3 Volltext
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|a GBV_ILN_350
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|a AR
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|j 2025
|b 26
|c 09
|h e10643
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