Near-Unity Quantum Yield Conductive Inks of Lead-Free Double Perovskite Quantum Dots for White LEDs
© 2025 Wiley‐VCH GmbH.
Veröffentlicht in: | Advanced materials (Deerfield Beach, Fla.). - 1998. - (2025) vom: 26. Sept., Seite e10643 |
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1. Verfasser: | |
Weitere Verfasser: | , , , , , , , , , , , , , , , , , , , , , |
Format: | Online-Aufsatz |
Sprache: | English |
Veröffentlicht: |
2025
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Zugriff auf das übergeordnete Werk: | Advanced materials (Deerfield Beach, Fla.) |
Schlagworte: | Journal Article double perovskite light‐emitting diodes quantum dot inks self‐trapped exciton short‐chain ligand |
Zusammenfassung: | © 2025 Wiley‐VCH GmbH. Double perovskite quantum dots (QDs) with self-trapped exciton emission provide an eco-friendly route to broadband white-light generation. Yet severe charge losses arising from trap-mediated recombination and inefficient carrier transport remain major obstacles to their integration into electroluminescent devices. Here, Sb3+/Mn2+ co-doped Cs2NaInCl6 QD inks are reported that enable the fabrication of defect-suppressed, conductive QD films with low charge transport and hole-injection barriers in light-emitting diode (LED) devices. Sb3+/Mn2+ co-doping not only induces white emission but also suppresses cation disorder, leading to near-unity photoluminescence quantum yield. Moreover, replacing long-chain ligands with short-chain 2-ethylhexanoic acid and 3,3-diphenylpropylamine chloride enhances the film conductivity by nearly 20-fold and induces a favorable band alignment with the poly(9-vinylcarbazole):poly[N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)-benzidine] hole transport layer, hereby reducing the injection barrier by 0.4 eV. These improvements enable an LED external quantum efficiency of 0.91% (0.05 cm2)-the highest reported for double perovskite QDs and nearly 1.3 the previous record. It is anticipated that this work provides a viable route toward overcoming the key limitations of double perovskite electroluminescence and advancing eco-friendly solid-state lighting |
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Beschreibung: | Date Revised 26.09.2025 published: Print-Electronic Citation Status Publisher |
ISSN: | 1521-4095 |
DOI: | 10.1002/adma.202510643 |