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250920s2025 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202506919
|2 doi
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|a pubmed25n1576.xml
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|a (DE-627)NLM392734877
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|a (NLM)40500993
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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|a Concepción, Omar
|e verfasserin
|4 aut
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|a Adaptive Epitaxy of C-Si-Ge-Sn
|b Customizable Bulk and Quantum Structures
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|c 2025
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Revised 21.09.2025
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2025 The Author(s). Advanced Materials published by Wiley‐VCH GmbH.
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|a The successful demonstration of (Si)Ge1-xSnx alloys as direct-gap materials for infrared lasers has driven intense research on group IV-based devices for nanoelectronics, energy harvesting, and quantum computing applications. The material palette of direct-gap group-IV alloys can be further extended by introducing carbon to fine-tune their structural and electronic properties, significantly expanding their functionality. This work presents heteroepitaxial growth of C(Si)GeSn alloys using an industry-standard reduced-pressure chemical vapor deposition reactor. The introduction of CBr4 as a precursor enables controlled incorporation of C atoms (<1 at.%) into the epilayer lattice, while simultaneously increasing the Sn content in the CGeSn alloy up to ≈18 at.%. Carbon plays a key role in modulating strain, stabilizing the crystal structure, and influencing material properties. By leveraging alloying and strain engineering, quaternary CSiGeSn bulk layers and CGeSn/GeSn heterostructures are epitaxially grown. The impact of C incorporation on optical emission is investigated in LEDs based on CGeSn/GeSn multiple quantum wells, demonstrating enhanced near-infrared emission at 2.54 µm, which is sustained up to room temperature
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|a Journal Article
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|a C(Si)GeSn alloys
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|a RP‐CVD
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|a epitaxial growth
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|a multi quantum wells
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|a Devaiya, Ambrishkumar J
|e verfasserin
|4 aut
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|a Zoellner, Marvin H
|e verfasserin
|4 aut
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|a Schubert, Markus A
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|a Bärwolf, Florian
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|a Seidel, Lukas
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|4 aut
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|a Reboud, Vincent
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|4 aut
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|a Tiedemann, Andreas T
|e verfasserin
|4 aut
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|a Bae, Jin-Hee
|e verfasserin
|4 aut
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|a Tchelnokov, Alexei
|e verfasserin
|4 aut
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|a Zhao, Qing-Tai
|e verfasserin
|4 aut
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|a Broderick, Christopher A
|e verfasserin
|4 aut
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|a Oehme, Michael
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|4 aut
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|a Capellini, Giovanni
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|4 aut
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|a Grützmacher, Detlev
|e verfasserin
|4 aut
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|a Buca, Dan
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 37(2025), 37 vom: 10. Sept., Seite e2506919
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnas
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| 773 |
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|g volume:37
|g year:2025
|g number:37
|g day:10
|g month:09
|g pages:e2506919
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|u http://dx.doi.org/10.1002/adma.202506919
|3 Volltext
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