Unveiling the Effects of Hydroxyl-Induced Trap States on the Charge Transport in p- and n-Channel Organic Field-Effect Transistors through Variable-Temperature Characterization
© 2025 The Author(s). Advanced Materials published by Wiley‐VCH GmbH.
Détails bibliographiques
| Publié dans: | Advanced materials (Deerfield Beach, Fla.). - 1998. - 37(2025), 34 vom: 22. Aug., Seite e2505631
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| Auteur principal: |
Radiev, Yurii
(Auteur) |
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| Autres auteurs: |
Wollandt, Tobias,
Klauk, Hagen,
Witte, Gregor |
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| Format: | Article en ligne
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| Langue: | English |
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| Publié: |
2025
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| Accès à la collection: | Advanced materials (Deerfield Beach, Fla.)
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| Sujets: | Journal Article
Schottky barrier
activation energy
contact resistance
interfacial trap states
organic field‐effect transistor
transfer length method
variable‐temperature analysis |
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