Unveiling the Effects of Hydroxyl-Induced Trap States on the Charge Transport in p- and n-Channel Organic Field-Effect Transistors through Variable-Temperature Characterization

Unveiling the Effects of Hydroxyl-Induced Trap States on the Charge Transport in p- and n-Channel Organic Field-Effect Transistors through Variable-Temperature Characterization

© 2025 The Author(s). Advanced Materials published by Wiley‐VCH GmbH.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 37(2025), 34 vom: 22. Aug., Seite e2505631
1. Verfasser: Radiev, Yurii (VerfasserIn)
Weitere Verfasser: Wollandt, Tobias, Klauk, Hagen, Witte, Gregor
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2025
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article Schottky barrier activation energy contact resistance interfacial trap states organic field‐effect transistor transfer length method variable‐temperature analysis
Online verfügbar Volltext