Anisotropy of Interfacial Bond-Induced Atom Removal Mechanisms of Silicon
Using chemical mechanical polishing (CMP) to flatten the surface of polycrystalline silicon wafers is a crucial step in semiconductor device manufacturing. The pending issue for such a process is the uneven surface removal during CMP of polycrystalline Si wafers. Such a phenomenon leads to the forma...
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Bibliographische Detailangaben
| Veröffentlicht in: | Langmuir : the ACS journal of surfaces and colloids. - 1985. - 41(2025), 32 vom: 19. Aug., Seite 21859-21868
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| 1. Verfasser: |
Zhang, Diankai
(VerfasserIn) |
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| Weitere Verfasser: |
Qin, Jie,
Wang, Yang,
Chen, Lei,
Xiao, Chen,
Franklin, Steven E,
Qian, Linmao |
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| Format: | Online-Aufsatz
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| Sprache: | English |
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| Veröffentlicht: |
2025
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| Zugriff auf das übergeordnete Werk: | Langmuir : the ACS journal of surfaces and colloids
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| Schlagworte: | Journal Article |
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