Atomistic Mechanisms of the Crystallographic Orientation-Dependent Cu1.8S Conductive Channel Formation in Cu2S-Based Memristors
© 2025 Wiley‐VCH GmbH.
| Veröffentlicht in: | Advanced materials (Deerfield Beach, Fla.). - 1998. - 37(2025), 32 vom: 24. Aug., Seite e2501300 |
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| 1. Verfasser: | |
| Weitere Verfasser: | , , , , , , , |
| Format: | Online-Aufsatz |
| Sprache: | English |
| Veröffentlicht: |
2025
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| Zugriff auf das übergeordnete Werk: | Advanced materials (Deerfield Beach, Fla.) |
| Schlagworte: | Journal Article copper sulfide electrically triggered phase transitions in situ TEM resistive switching strain |
| Zusammenfassung: | © 2025 Wiley‐VCH GmbH. Achieving multiple types of resistive switching in a single material with controlled ionic motion is a key challenge in neuromorphic computing, traditionally addressed by combining materials with distinct switching behaviors. Here, Cu2-xS is identified as a promising candidate to overcome this limitation due to its hierarchical phase transitions. Using in situ biasing experiments, reversible and non-reversible phase transitions (and resistive switching) are demonstrated in γ-Cu2S by controlling the compliance current. The formation of parallel high-digenite Cu1.8S channels, orientated along the γ-Cu2S [201] crystallographic direction, drives the nonvolatile resistive switching. These channels emerge via an intermediate δ-Cu2S phase and are stabilized at room temperature by residual strains, alongside β-Cu2S phase. The work clarifies the complex, electrically triggered phase transformations in γ-Cu2S, and highlights the potential of Cu2-xS as a versatile material for neuromorphic computing |
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| Beschreibung: | Date Revised 15.08.2025 published: Print-Electronic Citation Status PubMed-not-MEDLINE |
| ISSN: | 1521-4095 |
| DOI: | 10.1002/adma.202501300 |