Revealing Mechanisms of an Eco-Friendly GaN Electrochemical Mechanical Removal Process Modified with Green Fenton Reaction

Gallium Nitride (GaN), a leading third-generation semiconductor material, offers exceptional properties and broad application potential. However, its high hardness and chemical inertness make GaN wafers difficult to process, posing significant challenges in improving the polishing efficiency. During...

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Publié dans:	Langmuir : the ACS journal of surfaces and colloids. - 1985. - 41(2025), 6 vom: 18. Feb., Seite 4307-4317
Auteur principal:	Peng, Yang (Auteur)
Autres auteurs:	Wang, Zirui, Yao, Qingyu, Cheng, Feng, Zhang, Tianyu, Zhu, Yuguang, Wang, Yongguang, Wang, Chuanyang
Format:	Article en ligne
Langue:	English
Publié:	2025
Accès à la collection:	Langmuir : the ACS journal of surfaces and colloids
Sujets:	Journal Article