Revealing Mechanisms of an Eco-Friendly GaN Electrochemical Mechanical Removal Process Modified with Green Fenton Reaction
Gallium Nitride (GaN), a leading third-generation semiconductor material, offers exceptional properties and broad application potential. However, its high hardness and chemical inertness make GaN wafers difficult to process, posing significant challenges in improving the polishing efficiency. During...
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Bibliographische Detailangaben
| Veröffentlicht in: | Langmuir : the ACS journal of surfaces and colloids. - 1985. - 41(2025), 6 vom: 18. Feb., Seite 4307-4317
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| 1. Verfasser: |
Peng, Yang
(VerfasserIn) |
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| Weitere Verfasser: |
Wang, Zirui,
Yao, Qingyu,
Cheng, Feng,
Zhang, Tianyu,
Zhu, Yuguang,
Wang, Yongguang,
Wang, Chuanyang |
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| Format: | Online-Aufsatz
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| Sprache: | English |
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| Veröffentlicht: |
2025
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| Zugriff auf das übergeordnete Werk: | Langmuir : the ACS journal of surfaces and colloids
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| Schlagworte: | Journal Article |
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