Ferroelectric Optical Memristors Enabled by Non-Volatile Electro-Optic Effect

© 2025 Wiley‐VCH GmbH.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - (2025) vom: 07. Jan., Seite e2417658
1. Verfasser: Wen, Yiyang (VerfasserIn)
Weitere Verfasser: Cao, Yilin, Ren, Hongda, Du, Xiaona, Guo, Jiaxing, Wu, Zhenping, Liu, Weiwei, Du, Jiangbing, Zhang, Yang
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2025
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article electro‐optic ferroelectrics nonlinear optics non‐volatile optical memristors
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520 |a Memristors enable non-volatile memory and neuromorphic computing. Optical memristors are the fundamental element for programmable photonic integrated circuits due to their high-bandwidth computing, low crosstalk, and minimal power consumption. Here, an optical memristor enabled by a non-volatile electro-optic (EO) effect, where refractive index modulation under zero field is realized by deliberate control of domain alignment in the ferroelectric material Pb(Mg1/3Nb2/3)O3-PbTiO3(PMN-PT) is proposed. The non-volatile EO memristor is designed exclusively for the modulation of the optical phase without degrading the optical transparency, and it allows the support for deterministic and repeated non-volatile multilevel EO states. A non-volatile tunable waveplate composed of the optical memrisor for free-space optics, which allows for deterministic multilevel, and non-volatile phase shifts from 0 to π/2 is presented. The state switching rate of the memristor is less than 100 ms, with a switching energy consumption of 234 nJ, and the states can be retained for up to 12 h without requiring static power consumption. These results demonstrate a novel approach to fully realizing non-volatile optical memristors, where only optical phase modulation is involved, providing unprecedented opportunities for the development of new ferroelectric memristors 
650 4 |a Journal Article 
650 4 |a electro‐optic 
650 4 |a ferroelectrics 
650 4 |a nonlinear optics 
650 4 |a non‐volatile 
650 4 |a optical memristors 
700 1 |a Cao, Yilin  |e verfasserin  |4 aut 
700 1 |a Ren, Hongda  |e verfasserin  |4 aut 
700 1 |a Du, Xiaona  |e verfasserin  |4 aut 
700 1 |a Guo, Jiaxing  |e verfasserin  |4 aut 
700 1 |a Wu, Zhenping  |e verfasserin  |4 aut 
700 1 |a Liu, Weiwei  |e verfasserin  |4 aut 
700 1 |a Du, Jiangbing  |e verfasserin  |4 aut 
700 1 |a Zhang, Yang  |e verfasserin  |4 aut 
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773 1 8 |g year:2025  |g day:07  |g month:01  |g pages:e2417658 
856 4 0 |u http://dx.doi.org/10.1002/adma.202417658  |3 Volltext 
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