|
|
|
|
| LEADER |
01000naa a22002652c 4500 |
| 001 |
NLM38262193X |
| 003 |
DE-627 |
| 005 |
20250307035728.0 |
| 007 |
cr uuu---uuuuu |
| 008 |
250307s2025 xx |||||o 00| ||eng c |
| 024 |
7 |
|
|a 10.1002/adma.202417658
|2 doi
|
| 028 |
5 |
2 |
|a pubmed25n1274.xml
|
| 035 |
|
|
|a (DE-627)NLM38262193X
|
| 035 |
|
|
|a (NLM)39776037
|
| 040 |
|
|
|a DE-627
|b ger
|c DE-627
|e rakwb
|
| 041 |
|
|
|a eng
|
| 100 |
1 |
|
|a Wen, Yiyang
|e verfasserin
|4 aut
|
| 245 |
1 |
0 |
|a Ferroelectric Optical Memristors Enabled by Non-Volatile Electro-Optic Effect
|
| 264 |
|
1 |
|c 2025
|
| 336 |
|
|
|a Text
|b txt
|2 rdacontent
|
| 337 |
|
|
|a ƒaComputermedien
|b c
|2 rdamedia
|
| 338 |
|
|
|a ƒa Online-Ressource
|b cr
|2 rdacarrier
|
| 500 |
|
|
|a Date Revised 08.01.2025
|
| 500 |
|
|
|a published: Print-Electronic
|
| 500 |
|
|
|a Citation Status Publisher
|
| 520 |
|
|
|a © 2025 Wiley‐VCH GmbH.
|
| 520 |
|
|
|a Memristors enable non-volatile memory and neuromorphic computing. Optical memristors are the fundamental element for programmable photonic integrated circuits due to their high-bandwidth computing, low crosstalk, and minimal power consumption. Here, an optical memristor enabled by a non-volatile electro-optic (EO) effect, where refractive index modulation under zero field is realized by deliberate control of domain alignment in the ferroelectric material Pb(Mg1/3Nb2/3)O3-PbTiO3(PMN-PT) is proposed. The non-volatile EO memristor is designed exclusively for the modulation of the optical phase without degrading the optical transparency, and it allows the support for deterministic and repeated non-volatile multilevel EO states. A non-volatile tunable waveplate composed of the optical memrisor for free-space optics, which allows for deterministic multilevel, and non-volatile phase shifts from 0 to π/2 is presented. The state switching rate of the memristor is less than 100 ms, with a switching energy consumption of 234 nJ, and the states can be retained for up to 12 h without requiring static power consumption. These results demonstrate a novel approach to fully realizing non-volatile optical memristors, where only optical phase modulation is involved, providing unprecedented opportunities for the development of new ferroelectric memristors
|
| 650 |
|
4 |
|a Journal Article
|
| 650 |
|
4 |
|a electro‐optic
|
| 650 |
|
4 |
|a ferroelectrics
|
| 650 |
|
4 |
|a nonlinear optics
|
| 650 |
|
4 |
|a non‐volatile
|
| 650 |
|
4 |
|a optical memristors
|
| 700 |
1 |
|
|a Cao, Yilin
|e verfasserin
|4 aut
|
| 700 |
1 |
|
|a Ren, Hongda
|e verfasserin
|4 aut
|
| 700 |
1 |
|
|a Du, Xiaona
|e verfasserin
|4 aut
|
| 700 |
1 |
|
|a Guo, Jiaxing
|e verfasserin
|4 aut
|
| 700 |
1 |
|
|a Wu, Zhenping
|e verfasserin
|4 aut
|
| 700 |
1 |
|
|a Liu, Weiwei
|e verfasserin
|4 aut
|
| 700 |
1 |
|
|a Du, Jiangbing
|e verfasserin
|4 aut
|
| 700 |
1 |
|
|a Zhang, Yang
|e verfasserin
|4 aut
|
| 773 |
0 |
8 |
|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g (2025) vom: 07. Jan., Seite e2417658
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnas
|
| 773 |
1 |
8 |
|g year:2025
|g day:07
|g month:01
|g pages:e2417658
|
| 856 |
4 |
0 |
|u http://dx.doi.org/10.1002/adma.202417658
|3 Volltext
|
| 912 |
|
|
|a GBV_USEFLAG_A
|
| 912 |
|
|
|a SYSFLAG_A
|
| 912 |
|
|
|a GBV_NLM
|
| 912 |
|
|
|a GBV_ILN_350
|
| 951 |
|
|
|a AR
|
| 952 |
|
|
|j 2025
|b 07
|c 01
|h e2417658
|