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|a 10.1002/adma.202417658
|2 doi
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|a pubmed25n1274.xml
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|a (DE-627)NLM38262193X
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|a (NLM)39776037
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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|a Wen, Yiyang
|e verfasserin
|4 aut
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|a Ferroelectric Optical Memristors Enabled by Non-Volatile Electro-Optic Effect
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|c 2025
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Revised 08.01.2025
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|a published: Print-Electronic
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|a Citation Status Publisher
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|a © 2025 Wiley‐VCH GmbH.
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|a Memristors enable non-volatile memory and neuromorphic computing. Optical memristors are the fundamental element for programmable photonic integrated circuits due to their high-bandwidth computing, low crosstalk, and minimal power consumption. Here, an optical memristor enabled by a non-volatile electro-optic (EO) effect, where refractive index modulation under zero field is realized by deliberate control of domain alignment in the ferroelectric material Pb(Mg1/3Nb2/3)O3-PbTiO3(PMN-PT) is proposed. The non-volatile EO memristor is designed exclusively for the modulation of the optical phase without degrading the optical transparency, and it allows the support for deterministic and repeated non-volatile multilevel EO states. A non-volatile tunable waveplate composed of the optical memrisor for free-space optics, which allows for deterministic multilevel, and non-volatile phase shifts from 0 to π/2 is presented. The state switching rate of the memristor is less than 100 ms, with a switching energy consumption of 234 nJ, and the states can be retained for up to 12 h without requiring static power consumption. These results demonstrate a novel approach to fully realizing non-volatile optical memristors, where only optical phase modulation is involved, providing unprecedented opportunities for the development of new ferroelectric memristors
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|a Journal Article
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|a electro‐optic
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|a ferroelectrics
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|a nonlinear optics
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|a non‐volatile
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|a optical memristors
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|a Cao, Yilin
|e verfasserin
|4 aut
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|a Ren, Hongda
|e verfasserin
|4 aut
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|a Du, Xiaona
|e verfasserin
|4 aut
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|a Guo, Jiaxing
|e verfasserin
|4 aut
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|a Wu, Zhenping
|e verfasserin
|4 aut
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|a Liu, Weiwei
|e verfasserin
|4 aut
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|a Du, Jiangbing
|e verfasserin
|4 aut
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|a Zhang, Yang
|e verfasserin
|4 aut
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773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g (2025) vom: 07. Jan., Seite e2417658
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnas
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|g year:2025
|g day:07
|g month:01
|g pages:e2417658
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|u http://dx.doi.org/10.1002/adma.202417658
|3 Volltext
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|j 2025
|b 07
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