Ferroelectric Optical Memristors Enabled by Non-Volatile Electro-Optic Effect
© 2025 Wiley‐VCH GmbH.
| Veröffentlicht in: | Advanced materials (Deerfield Beach, Fla.). - 1998. - (2025) vom: 07. Jan., Seite e2417658 |
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| 1. Verfasser: | |
| Weitere Verfasser: | , , , , , , , |
| Format: | Online-Aufsatz |
| Sprache: | English |
| Veröffentlicht: |
2025
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| Zugriff auf das übergeordnete Werk: | Advanced materials (Deerfield Beach, Fla.) |
| Schlagworte: | Journal Article electro‐optic ferroelectrics nonlinear optics non‐volatile optical memristors |
| Zusammenfassung: | © 2025 Wiley‐VCH GmbH. Memristors enable non-volatile memory and neuromorphic computing. Optical memristors are the fundamental element for programmable photonic integrated circuits due to their high-bandwidth computing, low crosstalk, and minimal power consumption. Here, an optical memristor enabled by a non-volatile electro-optic (EO) effect, where refractive index modulation under zero field is realized by deliberate control of domain alignment in the ferroelectric material Pb(Mg1/3Nb2/3)O3-PbTiO3(PMN-PT) is proposed. The non-volatile EO memristor is designed exclusively for the modulation of the optical phase without degrading the optical transparency, and it allows the support for deterministic and repeated non-volatile multilevel EO states. A non-volatile tunable waveplate composed of the optical memrisor for free-space optics, which allows for deterministic multilevel, and non-volatile phase shifts from 0 to π/2 is presented. The state switching rate of the memristor is less than 100 ms, with a switching energy consumption of 234 nJ, and the states can be retained for up to 12 h without requiring static power consumption. These results demonstrate a novel approach to fully realizing non-volatile optical memristors, where only optical phase modulation is involved, providing unprecedented opportunities for the development of new ferroelectric memristors |
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| Beschreibung: | Date Revised 08.01.2025 published: Print-Electronic Citation Status Publisher |
| ISSN: | 1521-4095 |
| DOI: | 10.1002/adma.202417658 |