1.4% External Quantum Efficiency 988 nm Light Emitting Diode Based on Tin-Lead Halide Perovskite

© 2024 The Author(s). Advanced Materials published by Wiley‐VCH GmbH.

Détails bibliographiques
Publié dans:Advanced materials (Deerfield Beach, Fla.). - 1998. - (2024) vom: 20. Dez., Seite e2415958
Auteur principal: Chen, Jiale (Auteur)
Autres auteurs: Li, Jiaxiong, Pau, Riccardo, Chen, Lijun, Kot, Mordchai, Wang, Han, Mario, Lorenzo Di, Portale, Giuseppe, Loi, Maria Antonietta
Format: Article en ligne
Langue:English
Publié: 2024
Accès à la collection:Advanced materials (Deerfield Beach, Fla.)
Sujets:Journal Article 3‐(aminomethyl) piperidinium iodide carrier lifetime light‐emitting diodes near‐infrared surface passivation tin‐lead perovskite