Chen, J., Li, J., Pau, R., Chen, L., Kot, M., Wang, H., . . . Loi, M. A. (2024). 1.4% External Quantum Efficiency 988 nm Light Emitting Diode Based on Tin-Lead Halide Perovskite. Advanced materials (Deerfield Beach, Fla.). https://doi.org/10.1002/adma.202415958
Style de citation ChicagoChen, Jiale, Jiaxiong Li, Riccardo Pau, Lijun Chen, Mordchai Kot, Han Wang, Lorenzo Di Mario, Giuseppe Portale, et Maria Antonietta Loi. "1.4% External Quantum Efficiency 988 Nm Light Emitting Diode Based on Tin-Lead Halide Perovskite." Advanced Materials (Deerfield Beach, Fla.) 2024. https://dx.doi.org/10.1002/adma.202415958.
Style de citation MLAChen, Jiale, et al. "1.4% External Quantum Efficiency 988 Nm Light Emitting Diode Based on Tin-Lead Halide Perovskite." Advanced Materials (Deerfield Beach, Fla.), 2024.