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241210s2024 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202413212
|2 doi
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|a pubmed24n1627.xml
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|a (DE-627)NLM381404668
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|a (NLM)39654351
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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| 100 |
1 |
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|a Chang, Yu-Cheng
|e verfasserin
|4 aut
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| 245 |
1 |
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|a Breaking the Trade-Off Between Mobility and On-Off Ratio in Oxide Transistors
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|c 2024
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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| 338 |
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Revised 10.12.2024
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|a published: Print-Electronic
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|a Citation Status Publisher
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| 520 |
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|a © 2024 Wiley‐VCH GmbH.
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|a Amorphous oxide semiconductors (AOS) are pivotal for next-generation electronics due to their high electron mobility and excellent optical properties. However, In2O3, a key material in this family, encounters significant challenges in balancing high mobility and effective switching as its thickness is scaled down to nanometer dimensions. The high electron density in ultra-thin In2O3 hinders its ability to turn off effectively, leading to a critical trade-off between mobility and the on-current (Ion)/off-current (Ioff) ratio. This study introduces a mild CF4 plasma doping technique that effectively reduces electron density in 10 nm In2O3 at a low processing temperature of 70 °C, achieving a high mobility of 104 cm2 V⁻¹ s⁻¹ and an Ion/Ioff ratio exceeding 10⁸. A subsequent low-temperature post-annealing further improves the critical reliability and stability of CF4-doped In2O3 without raising the thermal budget, making this technique suitable for monolithic three-dimensional (3D) integration. Additionally, its application is demonstrated in In2O3 depletion-load inverters, highlighting its potential for advanced logic circuits and broader electronic and optoelectronic applications
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|a Journal Article
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|a In2O3
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|a amorphous oxide semiconductors
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|a electron degeneracy suppression
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|a high mobility
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|a monolithic 3D integration
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|a Wang, Sung-Tsun
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Lee, Yung-Ting
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Huang, Ching-Shuan
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Hsu, Chu-Hsiu
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Weng, Tzu-Ting
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Huang, Chang-Chang
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Chen, Chien-Wei
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Chou, Tsung-Te
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Chang, Chan-Yuen
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Woon, Wei-Yen
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Lin, Chun-Liang
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Sun, Jack Yuan-Chen
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Lien, Der-Hsien
|e verfasserin
|4 aut
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| 773 |
0 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g (2024) vom: 09. Dez., Seite e2413212
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
1 |
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|g year:2024
|g day:09
|g month:12
|g pages:e2413212
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|u http://dx.doi.org/10.1002/adma.202413212
|3 Volltext
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|j 2024
|b 09
|c 12
|h e2413212
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