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241129s2024 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202414800
|2 doi
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|a pubmed25n1268.xml
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|a (DE-627)NLM380965046
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|a (NLM)39610199
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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1 |
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|a Youn, Hye-Young
|e verfasserin
|4 aut
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| 245 |
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|a Soft Sputtering of Large-Area 2D MoS2 Layers Using Isolated Plasma Soft Deposition for Humidity Sensors
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|c 2024
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Revised 29.11.2024
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|a published: Print-Electronic
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|a Citation Status Publisher
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|a © 2024 Wiley‐VCH GmbH.
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|a 2D transition-metal dichalcogenides are emerging as key materials for next-generation semiconductor technologies owing to their tunable bandgaps, high carrier mobilities, and exceptional surface-to-volume ratios. Among them, molybdenum disulfide (MoS2) has garnered significant attention. However, scalable wafer-level deposition methods that enable uniform layer-controlled synthesis remain a critical challenge. In this paper, a novel fabrication approach-isolated plasma soft deposition (IPSD) followed by sulfurization-for the scalable production of 2D MoS2 with precise layer control is introduced. The IPSD system employs a scanning-based deposition method combined with plasma surface pretreatment, achieving large-area, high-quality 2D MoS2 layers. Comprehensive characterizations using Raman, UV-vis, and photoluminescence spectroscopy, and transmission electron microscopy confirmed the successful synthesis of crystalline mono- to tetralayer 2D MoS2 on 6-inch SiO2/Si substrates. Furthermore, respiration sensors fabricated using the IPSD-grown 2D MoS2 layers demonstrated fast response times (≈1 s) and high response to relative humidity levels between 30% and 60%. This study offers significant advancements in the scalable synthesis of 2D MoS2 and opens new avenues for its application in advanced sensing and electronic devices
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|a Journal Article
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|a 2D
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|a isolated plasma
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|a layer‐controlled
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|a molybdenum disulfide
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|a respiration sensor
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|a wafer scale
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1 |
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|a Choi, Tae-Yang
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Shim, Junoh
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Park, Se Young
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Kwon, Min-Ki
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Kim, Sunkook
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Kim, Han-Ki
|e verfasserin
|4 aut
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| 773 |
0 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g (2024) vom: 28. Nov., Seite e2414800
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnas
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| 773 |
1 |
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|g year:2024
|g day:28
|g month:11
|g pages:e2414800
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|u http://dx.doi.org/10.1002/adma.202414800
|3 Volltext
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