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241121s2024 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202409017
|2 doi
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|a pubmed24n1608.xml
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|a (DE-627)NLM380546353
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|a (NLM)39568234
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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| 100 |
1 |
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|a Sun, Ruo-Yao
|e verfasserin
|4 aut
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| 245 |
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|a Orientation-Selective Memory Switching in Quasi-1D NbSe3 Neuromorphic Device for Omnibearing Motion Detection
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|c 2024
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Revised 21.11.2024
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|a published: Print-Electronic
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|a Citation Status Publisher
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|a © 2024 Wiley‐VCH GmbH.
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|a Intelligent neuromorphic hardware holds considerable promise in addressing the growing demand for massive real-time data processing in edge computing. Resistive switching materials with intrinsic anisotropy and a compact design of non-volatile memory devices with the capability of handling spatiotemporally reconstructed data is crucial to perform sophisticated tasks in complex application scenarios. In this study, an anisotropic resistive switching cell with a planar configuration based on lithiated NbSe3 nanosheets is demonstrated. Benefitting from the highly aligned diffusive channel associated with a quasi-1D van der Waals structure, the memristor patterned along NbSe3 atomic chains presents robust memory switching behavior with superior stability, particularly the low set/reset voltages (0.4 V/-0.36 V) and extremely small standard deviation (0.041 V/0.051 V), among the best compared to state-of-the-art devices. More importantly, unlike traditional resistive switching materials, anisotropic ion migration in NbSe3 crystals leads to a high orientation selectivity in the conductance update. Custom-designed neuromorphic hardware contributes to the implementation of omnibearing motion recognition for automatic pilot applications, yielding a high accuracy of 95.9% considering variations. This article presents a new strategy based on NbSe3 crystals to develop a neuromorphic computing system with intelligent application scenarios
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|a Journal Article
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|a NbSe3
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|a neuromorphic devices
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|a non‐volatile memory
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|a orientation selectivity
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|a van der Waals crystal
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|a Hou, Ze-Yu
|e verfasserin
|4 aut
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|a Chen, Qing
|e verfasserin
|4 aut
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| 700 |
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|a Zhu, Bing-Xuan
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Zhu, Cheng-Yi
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Huang, Pei-Yu
|e verfasserin
|4 aut
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| 700 |
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|a Hu, Zi-Han
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Zhen, Liang
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Zhou, Fei-Chi
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Xu, Cheng-Yan
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Qin, Jing-Kai
|e verfasserin
|4 aut
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| 773 |
0 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g (2024) vom: 20. Nov., Seite e2409017
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g year:2024
|g day:20
|g month:11
|g pages:e2409017
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|u http://dx.doi.org/10.1002/adma.202409017
|3 Volltext
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|a GBV_USEFLAG_A
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|a SYSFLAG_A
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|a GBV_NLM
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|a GBV_ILN_350
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|a AR
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|j 2024
|b 20
|c 11
|h e2409017
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