Orientation-Selective Memory Switching in Quasi-1D NbSe3 Neuromorphic Device for Omnibearing Motion Detection

Orientation-Selective Memory Switching in Quasi-1D NbSe3 Neuromorphic Device for Omnibearing Motion Detection

© 2024 Wiley‐VCH GmbH.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - (2024) vom: 20. Nov., Seite e2409017
1. Verfasser: Sun, Ruo-Yao (VerfasserIn)
Weitere Verfasser: Hou, Ze-Yu, Chen, Qing, Zhu, Bing-Xuan, Zhu, Cheng-Yi, Huang, Pei-Yu, Hu, Zi-Han, Zhen, Liang, Zhou, Fei-Chi, Xu, Cheng-Yan, Qin, Jing-Kai
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2024
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article NbSe3 neuromorphic devices non‐volatile memory orientation selectivity van der Waals crystal
Beschreibung
Zusammenfassung:© 2024 Wiley‐VCH GmbH.
Intelligent neuromorphic hardware holds considerable promise in addressing the growing demand for massive real-time data processing in edge computing. Resistive switching materials with intrinsic anisotropy and a compact design of non-volatile memory devices with the capability of handling spatiotemporally reconstructed data is crucial to perform sophisticated tasks in complex application scenarios. In this study, an anisotropic resistive switching cell with a planar configuration based on lithiated NbSe3 nanosheets is demonstrated. Benefitting from the highly aligned diffusive channel associated with a quasi-1D van der Waals structure, the memristor patterned along NbSe3 atomic chains presents robust memory switching behavior with superior stability, particularly the low set/reset voltages (0.4 V/-0.36 V) and extremely small standard deviation (0.041 V/0.051 V), among the best compared to state-of-the-art devices. More importantly, unlike traditional resistive switching materials, anisotropic ion migration in NbSe3 crystals leads to a high orientation selectivity in the conductance update. Custom-designed neuromorphic hardware contributes to the implementation of omnibearing motion recognition for automatic pilot applications, yielding a high accuracy of 95.9% considering variations. This article presents a new strategy based on NbSe3 crystals to develop a neuromorphic computing system with intelligent application scenarios
Beschreibung:Date Revised 21.11.2024
published: Print-Electronic
Citation Status Publisher
ISSN:1521-4095
DOI:10.1002/adma.202409017