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241120s2024 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202410060
|2 doi
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|a pubmed24n1607.xml
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|a (DE-627)NLM380511509
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|a (NLM)39564745
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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| 100 |
1 |
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|a He, Yueyue
|e verfasserin
|4 aut
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| 245 |
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|a Printed High-Entropy Prussian Blue Analogs for Advanced Non-Volatile Memristive Devices
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|c 2024
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Revised 20.11.2024
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|a published: Print-Electronic
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|a Citation Status Publisher
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|a © 2024 The Author(s). Advanced Materials published by Wiley‐VCH GmbH.
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|a Non-volatile memristors dynamically switch between high (HRS) and low resistance states (LRS) in response to electrical stimuli, essential for electronic memories, neuromorphic computing, and artificial intelligence. High-entropy Prussian blue analogs (HE-PBAs) are promising insertion-type battery materials due to their diverse composition, high structural integrity, and favorable ionic conductivity. This work proposes a non-volatile, bipolar memristor based on HE-PBA. The device, featuring an active layer of HE-PBA sandwiched between Ag and ITO electrodes, is fabricated by inkjet printing and microplotting. The conduction mechanism of the Ag/HE-PBA/ITO device is systematically investigated. The results indicate that the transition between HRS and LRS is driven by an insulating-metallic transition, triggered by extraction/insertion of highly mobile Na+ ions upon application of an electric field. The memristor operates through a low-energy process akin to Na+ shuttling in Na-ion batteries rather than depending on formation/rupture of Ag filaments. Notably, it showcases promising characteristics, including non-volatility, self-compliance, and forming-free behavior, and further exhibits low operation voltage (VSET = -0.26 V, VRESET = 0.36 V), low power consumption (PSET = 26 µW, PRESET = 8.0 µW), and a high ROFF/RON ratio of 104. This underscores the potential of high-entropy insertion materials for developing printed memristors with distinct operation mechanisms
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|a Journal Article
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|a high‐entropy PBA
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|a memristors
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|a non‐volatile memory
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4 |
|a resistive switching mechanism
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|a Ting, Yin-Ying
|e verfasserin
|4 aut
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|a Hu, Hongrong
|e verfasserin
|4 aut
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|a Diemant, Thomas
|e verfasserin
|4 aut
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|a Dai, Yuting
|e verfasserin
|4 aut
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|a Lin, Jing
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Schweidler, Simon
|e verfasserin
|4 aut
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|a Marques, Gabriel Cadilha
|e verfasserin
|4 aut
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|a Hahn, Horst
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Ma, Yanjiao
|e verfasserin
|4 aut
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|a Brezesinski, Torsten
|e verfasserin
|4 aut
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|a Kowalski, Piotr M
|e verfasserin
|4 aut
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1 |
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|a Breitung, Ben
|e verfasserin
|4 aut
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|a Aghassi-Hagmann, Jasmin
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g (2024) vom: 20. Nov., Seite e2410060
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
1 |
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|g year:2024
|g day:20
|g month:11
|g pages:e2410060
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|u http://dx.doi.org/10.1002/adma.202410060
|3 Volltext
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|j 2024
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|c 11
|h e2410060
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