Printed High-Entropy Prussian Blue Analogs for Advanced Non-Volatile Memristive Devices

Printed High-Entropy Prussian Blue Analogs for Advanced Non-Volatile Memristive Devices

© 2024 The Author(s). Advanced Materials published by Wiley‐VCH GmbH.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - (2024) vom: 20. Nov., Seite e2410060
1. Verfasser: He, Yueyue (VerfasserIn)
Weitere Verfasser: Ting, Yin-Ying, Hu, Hongrong, Diemant, Thomas, Dai, Yuting, Lin, Jing, Schweidler, Simon, Marques, Gabriel Cadilha, Hahn, Horst, Ma, Yanjiao, Brezesinski, Torsten, Kowalski, Piotr M, Breitung, Ben, Aghassi-Hagmann, Jasmin
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2024
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article high‐entropy PBA memristors non‐volatile memory resistive switching mechanism
Beschreibung
Zusammenfassung:© 2024 The Author(s). Advanced Materials published by Wiley‐VCH GmbH.
Non-volatile memristors dynamically switch between high (HRS) and low resistance states (LRS) in response to electrical stimuli, essential for electronic memories, neuromorphic computing, and artificial intelligence. High-entropy Prussian blue analogs (HE-PBAs) are promising insertion-type battery materials due to their diverse composition, high structural integrity, and favorable ionic conductivity. This work proposes a non-volatile, bipolar memristor based on HE-PBA. The device, featuring an active layer of HE-PBA sandwiched between Ag and ITO electrodes, is fabricated by inkjet printing and microplotting. The conduction mechanism of the Ag/HE-PBA/ITO device is systematically investigated. The results indicate that the transition between HRS and LRS is driven by an insulating-metallic transition, triggered by extraction/insertion of highly mobile Na+ ions upon application of an electric field. The memristor operates through a low-energy process akin to Na+ shuttling in Na-ion batteries rather than depending on formation/rupture of Ag filaments. Notably, it showcases promising characteristics, including non-volatility, self-compliance, and forming-free behavior, and further exhibits low operation voltage (VSET = -0.26 V, VRESET = 0.36 V), low power consumption (PSET = 26 µW, PRESET = 8.0 µW), and a high ROFF/RON ratio of 104. This underscores the potential of high-entropy insertion materials for developing printed memristors with distinct operation mechanisms
Beschreibung:Date Revised 20.11.2024
published: Print-Electronic
Citation Status Publisher
ISSN:1521-4095
DOI:10.1002/adma.202410060