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241115s2024 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202409327
|2 doi
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|a pubmed24n1602.xml
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|a (DE-627)NLM380199661
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|a (NLM)39533495
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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|a Zhao, Yunhai
|e verfasserin
|4 aut
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|a Energy Band Alignment and Defect Synergistic Regulation Enable Air-Solution-Processed Kesterite Solar Cells With the Lowest VOC Deficit
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|c 2024
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Revised 13.11.2024
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|a published: Print-Electronic
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|a Citation Status Publisher
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|a © 2024 Wiley‐VCH GmbH.
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|a The major challenge in preparing high-performance Cu2ZnSn(S,Se)4 solar cells is the large open circuit voltage deficit (VOC-def). A new strategy utilizing the synergistic substitution of Ag and In dual cations has been proposed to simultaneously address the problems of undesirable interface band alignment and high-density detrimental bulk defects, obtaining decreased carrier recombination rate and increased minority carrier lifetime. The shorter In-S/Se bonds move the CBM higher by generating stronger repulsive force than the Sn-S/Se bonds, thus adjusting the interface band alignment. Ag substitution can effectively suppress Cu─Zn disorder, while Ag, In dual substitution can further passivate Sn-related defects and solve the issue of low carrier concentration in Ag single-substituted samples. Besides, the superior carrier property of In-Se materials significantly enhanced the device carrier lifetime and minority carrier diffusion length. The state-of-the-art air-solution-processed CZTSSe device without any addition treatment with 14.33% efficiency and 580 mV VOC is obtained, possessing the lowest VOC-def value currently available in the CZTSSe field (VOC/VOC SQ = 64.7%). This work emphasizes the synergistic modulation of band alignment, defect level, grain growth, and carrier transportation by dual cation substitution, which paves a convenient and effective way to realize high-performance solar cells and photovoltaic devices
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|a Journal Article
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|a defect
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|a efficiency
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|a energy band alignment
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|a kesterite
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|a solar cell
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|a Chen, Xingye
|e verfasserin
|4 aut
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|a Chen, Shuo
|e verfasserin
|4 aut
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| 700 |
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|a Zheng, Zhuanghao
|e verfasserin
|4 aut
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|a Su, Zhenghua
|e verfasserin
|4 aut
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| 700 |
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|a Ma, Hongli
|e verfasserin
|4 aut
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|a Zhang, Xianghua
|e verfasserin
|4 aut
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| 700 |
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|a Liang, Guangxing
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g (2024) vom: 12. Nov., Seite e2409327
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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|g year:2024
|g day:12
|g month:11
|g pages:e2409327
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|u http://dx.doi.org/10.1002/adma.202409327
|3 Volltext
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