Energy Band Alignment and Defect Synergistic Regulation Enable Air-Solution-Processed Kesterite Solar Cells With the Lowest VOC Deficit
© 2024 Wiley‐VCH GmbH.
Veröffentlicht in: | Advanced materials (Deerfield Beach, Fla.). - 1998. - (2024) vom: 12. Nov., Seite e2409327 |
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1. Verfasser: | |
Weitere Verfasser: | , , , , , , |
Format: | Online-Aufsatz |
Sprache: | English |
Veröffentlicht: |
2024
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Zugriff auf das übergeordnete Werk: | Advanced materials (Deerfield Beach, Fla.) |
Schlagworte: | Journal Article defect efficiency energy band alignment kesterite solar cell |
Zusammenfassung: | © 2024 Wiley‐VCH GmbH. The major challenge in preparing high-performance Cu2ZnSn(S,Se)4 solar cells is the large open circuit voltage deficit (VOC-def). A new strategy utilizing the synergistic substitution of Ag and In dual cations has been proposed to simultaneously address the problems of undesirable interface band alignment and high-density detrimental bulk defects, obtaining decreased carrier recombination rate and increased minority carrier lifetime. The shorter In-S/Se bonds move the CBM higher by generating stronger repulsive force than the Sn-S/Se bonds, thus adjusting the interface band alignment. Ag substitution can effectively suppress Cu─Zn disorder, while Ag, In dual substitution can further passivate Sn-related defects and solve the issue of low carrier concentration in Ag single-substituted samples. Besides, the superior carrier property of In-Se materials significantly enhanced the device carrier lifetime and minority carrier diffusion length. The state-of-the-art air-solution-processed CZTSSe device without any addition treatment with 14.33% efficiency and 580 mV VOC is obtained, possessing the lowest VOC-def value currently available in the CZTSSe field (VOC/VOC SQ = 64.7%). This work emphasizes the synergistic modulation of band alignment, defect level, grain growth, and carrier transportation by dual cation substitution, which paves a convenient and effective way to realize high-performance solar cells and photovoltaic devices |
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Beschreibung: | Date Revised 13.11.2024 published: Print-Electronic Citation Status Publisher |
ISSN: | 1521-4095 |
DOI: | 10.1002/adma.202409327 |