|
|
|
|
| LEADER |
01000caa a22002652 4500 |
| 001 |
NLM378806432 |
| 003 |
DE-627 |
| 005 |
20241130232141.0 |
| 007 |
cr uuu---uuuuu |
| 008 |
241013s2024 xx |||||o 00| ||eng c |
| 024 |
7 |
|
|a 10.1002/adma.202408424
|2 doi
|
| 028 |
5 |
2 |
|a pubmed24n1618.xml
|
| 035 |
|
|
|a (DE-627)NLM378806432
|
| 035 |
|
|
|a (NLM)39394979
|
| 040 |
|
|
|a DE-627
|b ger
|c DE-627
|e rakwb
|
| 041 |
|
|
|a eng
|
| 100 |
1 |
|
|a Aberl, Johannes
|e verfasserin
|4 aut
|
| 245 |
1 |
0 |
|a All-Epitaxial Self-Assembly of Silicon Color Centers Confined Within Sub-Nanometer Thin Layers Using Ultra-Low Temperature Epitaxy
|
| 264 |
|
1 |
|c 2024
|
| 336 |
|
|
|a Text
|b txt
|2 rdacontent
|
| 337 |
|
|
|a ƒaComputermedien
|b c
|2 rdamedia
|
| 338 |
|
|
|a ƒa Online-Ressource
|b cr
|2 rdacarrier
|
| 500 |
|
|
|a Date Revised 30.11.2024
|
| 500 |
|
|
|a published: Print-Electronic
|
| 500 |
|
|
|a Citation Status PubMed-not-MEDLINE
|
| 520 |
|
|
|a © 2024 The Author(s). Advanced Materials published by Wiley‐VCH GmbH.
|
| 520 |
|
|
|a Silicon-based color-centers (SiCCs) have recently emerged as quantum-light sources that can be combined with telecom-range Si Photonics platforms. Unfortunately, using conventional SiCC fabrication schemes, deterministic control over the vertical emitter position is impossible due to the stochastic nature of the required ion-implantation(s). To overcome this bottleneck toward high-yield integration, a radically innovative creation method is demonstrated for various SiCCs with excellent optical quality, solely relying on the epitaxial growth of Si and C-doped Si at atypically-low temperatures in an ultra-clean growth environment. These telecom emitters can be confined within sub-nm thick epilayers embedded within a highly crystalline Si matrix at arbitrary vertical positions. Tuning growth conditions and doping, different well-known SiCC types can be selectively created, including W-centers, T-centers, G-centers, and, especially, a so far unidentified derivative of the latter, introduced as G'-center. The zero-phonon emission from G'-centers at ≈1300 nm can be conveniently tuned by the C-concentration, leading to a systematic wavelength shift and linewidth narrowing toward low emitter densities, which makes both, the epitaxy-based fabrication and the G'-center particularly promising as integrable Si-based single-photon sources and spin-photon interfaces
|
| 650 |
|
4 |
|a Journal Article
|
| 650 |
|
4 |
|a deterministic position control
|
| 650 |
|
4 |
|a epitaxy
|
| 650 |
|
4 |
|a quantum light sources
|
| 650 |
|
4 |
|a self‐assembly
|
| 650 |
|
4 |
|a silicon color centers
|
| 700 |
1 |
|
|a Navarrete, Enrique Prado
|e verfasserin
|4 aut
|
| 700 |
1 |
|
|a Karaman, Merve
|e verfasserin
|4 aut
|
| 700 |
1 |
|
|a Enriquez, Diego Haya
|e verfasserin
|4 aut
|
| 700 |
1 |
|
|a Wilflingseder, Christoph
|e verfasserin
|4 aut
|
| 700 |
1 |
|
|a Salomon, Andreas
|e verfasserin
|4 aut
|
| 700 |
1 |
|
|a Primetzhofer, Daniel
|e verfasserin
|4 aut
|
| 700 |
1 |
|
|a Schubert, Markus Andreas
|e verfasserin
|4 aut
|
| 700 |
1 |
|
|a Capellini, Giovanni
|e verfasserin
|4 aut
|
| 700 |
1 |
|
|a Fromherz, Thomas
|e verfasserin
|4 aut
|
| 700 |
1 |
|
|a Deák, Peter
|e verfasserin
|4 aut
|
| 700 |
1 |
|
|a Udvarhelyi, Péter
|e verfasserin
|4 aut
|
| 700 |
1 |
|
|a Li, Song
|e verfasserin
|4 aut
|
| 700 |
1 |
|
|a Gali, Ádám
|e verfasserin
|4 aut
|
| 700 |
1 |
|
|a Brehm, Moritz
|e verfasserin
|4 aut
|
| 773 |
0 |
8 |
|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 36(2024), 48 vom: 03. Nov., Seite e2408424
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
|
| 773 |
1 |
8 |
|g volume:36
|g year:2024
|g number:48
|g day:03
|g month:11
|g pages:e2408424
|
| 856 |
4 |
0 |
|u http://dx.doi.org/10.1002/adma.202408424
|3 Volltext
|
| 912 |
|
|
|a GBV_USEFLAG_A
|
| 912 |
|
|
|a SYSFLAG_A
|
| 912 |
|
|
|a GBV_NLM
|
| 912 |
|
|
|a GBV_ILN_350
|
| 951 |
|
|
|a AR
|
| 952 |
|
|
|d 36
|j 2024
|e 48
|b 03
|c 11
|h e2408424
|