|
|
|
|
| LEADER |
01000caa a22002652c 4500 |
| 001 |
NLM378147528 |
| 003 |
DE-627 |
| 005 |
20250306171120.0 |
| 007 |
cr uuu---uuuuu |
| 008 |
240927s2024 xx |||||o 00| ||eng c |
| 024 |
7 |
|
|a 10.1002/adma.202410469
|2 doi
|
| 028 |
5 |
2 |
|a pubmed25n1259.xml
|
| 035 |
|
|
|a (DE-627)NLM378147528
|
| 035 |
|
|
|a (NLM)39328046
|
| 040 |
|
|
|a DE-627
|b ger
|c DE-627
|e rakwb
|
| 041 |
|
|
|a eng
|
| 100 |
1 |
|
|a Sun, Zongdong
|e verfasserin
|4 aut
|
| 245 |
1 |
0 |
|a Low-Symmetry Van der Waals Dielectric GaInS3 Triggered 2D MoS2 Giant Anisotropy via Symmetry Engineering
|
| 264 |
|
1 |
|c 2024
|
| 336 |
|
|
|a Text
|b txt
|2 rdacontent
|
| 337 |
|
|
|a ƒaComputermedien
|b c
|2 rdamedia
|
| 338 |
|
|
|a ƒa Online-Ressource
|b cr
|2 rdacarrier
|
| 500 |
|
|
|a Date Revised 15.11.2024
|
| 500 |
|
|
|a published: Print-Electronic
|
| 500 |
|
|
|a Citation Status PubMed-not-MEDLINE
|
| 520 |
|
|
|a © 2024 Wiley‐VCH GmbH.
|
| 520 |
|
|
|a Low-symmetry structures in van der Waals materials have facilitated the advancement of anisotropic electronic and optoelectronic devices. However, the intrinsic low symmetry structure exhibits a small adjustable anisotropy ratio (1-10), which hinders its further assembly and processing into high-performance devices. Here, a novel 2D anisotropic dielectric, GaInS3 (GIS), which induces isotropic MoS2 to exhibit significant anisotropic optical and electrical responses is demonstrated. With the excellent gate modulation ability of 2D GIS (dielectric constant k ∼12), MoS2 field effect transistor (FET) shows an adjustable conductance ratio from isotropic to anisotropic under dual-gate modulation, up to 106. Theoretical calculations indicate that anisotropy originates from lattice mismatch-induced charge density deformation at the interface. Moreover, the MoS2/GIS photodetector demonstrates high responsivity (≈4750 A W-1) and a large dichroic ratio (≈167). The anisotropic van der Waals dielectric GIS paves the way for the development of 2D transition metal dichalcogenides (TMDCs) in the fields of anisotropic photonics, electronics, and optoelectronics
|
| 650 |
|
4 |
|a Journal Article
|
| 650 |
|
4 |
|a GaInS3
|
| 650 |
|
4 |
|a MoS2/GaInS3 heterojunction
|
| 650 |
|
4 |
|a anisotropic conductance
|
| 650 |
|
4 |
|a dielectrics
|
| 650 |
|
4 |
|a polarization‐sensitive photodetector
|
| 650 |
|
4 |
|a symmetry engineering
|
| 700 |
1 |
|
|a Liu, Jie
|e verfasserin
|4 aut
|
| 700 |
1 |
|
|a Xu, Yongshan
|e verfasserin
|4 aut
|
| 700 |
1 |
|
|a Xiong, Xiong
|e verfasserin
|4 aut
|
| 700 |
1 |
|
|a Li, Yuan
|e verfasserin
|4 aut
|
| 700 |
1 |
|
|a Wang, Meihui
|e verfasserin
|4 aut
|
| 700 |
1 |
|
|a Liu, Kailang
|e verfasserin
|4 aut
|
| 700 |
1 |
|
|a Li, Huiqiao
|e verfasserin
|4 aut
|
| 700 |
1 |
|
|a Wu, Yanqing
|e verfasserin
|4 aut
|
| 700 |
1 |
|
|a Zhai, Tianyou
|e verfasserin
|4 aut
|
| 773 |
0 |
8 |
|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 36(2024), 46 vom: 27. Nov., Seite e2410469
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnas
|
| 773 |
1 |
8 |
|g volume:36
|g year:2024
|g number:46
|g day:27
|g month:11
|g pages:e2410469
|
| 856 |
4 |
0 |
|u http://dx.doi.org/10.1002/adma.202410469
|3 Volltext
|
| 912 |
|
|
|a GBV_USEFLAG_A
|
| 912 |
|
|
|a SYSFLAG_A
|
| 912 |
|
|
|a GBV_NLM
|
| 912 |
|
|
|a GBV_ILN_350
|
| 951 |
|
|
|a AR
|
| 952 |
|
|
|d 36
|j 2024
|e 46
|b 27
|c 11
|h e2410469
|