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240923s2024 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202406772
|2 doi
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|a pubmed24n1546.xml
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|a (DE-627)NLM377952028
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|a (NLM)39308250
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|a DE-627
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|a eng
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|a Tai, Lixuan
|e verfasserin
|4 aut
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|a Giant Hall Switching by Surface-State-Mediated Spin-Orbit Torque in a Hard Ferromagnetic Topological Insulator
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|c 2024
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
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|a Date Revised 23.09.2024
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|a published: Print-Electronic
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|a Citation Status Publisher
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|a © 2024 Wiley‐VCH GmbH.
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|a Topological insulators (TI) and magnetic topological insulators (MTI) can apply highly efficient spin-orbit torque (SOT) and manipulate the magnetization with their unique topological surface states (TSS) with ultrahigh efficiency. Here, efficient SOT switching of a hard MTI, V-doped (Bi,Sb)2Te3 (VBST), with a large coercive field that can prevent the influence of an external magnetic field, is demonstrated. A giant switched anomalous Hall resistance of 9.2 kΩ is realized, among the largest of all SOT systems, which makes the Hall channel a good readout and eliminates the need to fabricate complicated magnetic tunnel junction (MTJ) structures. The SOT switching current density can be reduced to 2.8 × 105 A cm-2, indicating its high efficiency. Moreover, as the Fermi level is moved away from the Dirac point by both gate and composition tuning, VBST exhibits a transition from edge-state-mediated to surface-state-mediated transport, thus enhancing the SOT effective field to (1.56 ± 0.12) × 10-6 T A-1 cm2 and the interfacial charge-to-spin conversion efficiency to 3.9 ± 0.3 nm-1. The findings establish VBST as an extraordinary candidate for energy-efficient magnetic memory devices
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|a Journal Article
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|a current‐induced switching
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|a hard ferromagnets
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|a magnetic topological insulators
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|a spin‐orbit torque
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|a topological surface states
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|a He, Haoran
|e verfasserin
|4 aut
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|a Chong, Su Kong
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|a Zhang, Huairuo
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|a Huang, Hanshen
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|a Qiu, Gang
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|a Ren, Yuxing
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|a Li, Yaochen
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|a Yang, Hung-Yu
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|a Yang, Ting-Hsun
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|a Dong, Xiang
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|a Dai, Bingqian
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|a Qu, Tao
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|a Shu, Qingyuan
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|a Pan, Quanjun
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|a Zhang, Peng
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|a Xue, Fei
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|a Li, Jie
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|a Davydov, Albert V
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|a Wang, Kang L
|e verfasserin
|4 aut
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g (2024) vom: 23. Sept., Seite e2406772
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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|g year:2024
|g day:23
|g month:09
|g pages:e2406772
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|u http://dx.doi.org/10.1002/adma.202406772
|3 Volltext
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