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240909s2024 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202404590
|2 doi
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|a pubmed24n1528.xml
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|a (DE-627)NLM377357995
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|a (NLM)39248701
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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|a Gebeyehu, Zewdu M
|e verfasserin
|4 aut
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|a Decoupled High-Mobility Graphene on Cu(111)/Sapphire via Chemical Vapor Deposition
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|c 2024
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Revised 09.09.2024
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|a published: Print-Electronic
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|a Citation Status Publisher
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|a © 2024 The Author(s). Advanced Materials published by Wiley‐VCH GmbH.
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|a The growth of high-quality graphene on flat and rigid templates, such as metal thin films on insulating wafers, is regarded as a key enabler for technologies based on 2D materials. In this work, the growth of decoupled graphene is introduced via non-reducing low-pressure chemical vapor deposition (LPCVD) on crystalline Cu(111) films deposited on sapphire. The resulting film is atomically flat, with no detectable cracks or ripples, and lies atop of a thin Cu2O layer, as confirmed by microscopy, diffraction, and spectroscopy analyses. Post-growth treatment of the partially decoupled graphene enables full and uniform oxidation of the interface, greatly simplifying subsequent transfer processes, particularly dry-pick up - a task that proves challenging when dealing with graphene directly synthesized on metallic Cu(111). Electrical transport measurements reveal high carrier mobility at room temperature, exceeding 104 cm2 V-1 s-1 on SiO2/Si and 105 cm2 V-1 s-1 upon encapsulation in hexagonal boron nitride (hBN). The demonstrated growth approach yields exceptional material quality, in line with micro-mechanically exfoliated graphene flakes, and thus paves the way toward large-scale production of pristine graphene suitable for high-performance next-generation applications
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|a Journal Article
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|a Cu2O
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|a chemical vapor deposition
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|a copper film
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|a dry pick‐up
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|a graphene
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|a high‐mobility
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|a Mišeikis, Vaidotas
|e verfasserin
|4 aut
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|a Forti, Stiven
|e verfasserin
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|a Rossi, Antonio
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|a Mishra, Neeraj
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|a Boschi, Alex
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|a Ivanov, Yurii P
|e verfasserin
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|a Martini, Leonardo
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|4 aut
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|a Ochapski, Michal W
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|4 aut
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|a Piccinini, Giulia
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|4 aut
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|a Watanabe, Kenji
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|a Taniguchi, Takashi
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|a Divitini, Giorgio
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|a Beltram, Fabio
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|a Pezzini, Sergio
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|a Coletti, Camilla
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|4 aut
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g (2024) vom: 09. Sept., Seite e2404590
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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|g year:2024
|g day:09
|g month:09
|g pages:e2404590
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|u http://dx.doi.org/10.1002/adma.202404590
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