Decoupled High-Mobility Graphene on Cu(111)/Sapphire via Chemical Vapor Deposition

Decoupled High-Mobility Graphene on Cu(111)/Sapphire via Chemical Vapor Deposition

© 2024 The Author(s). Advanced Materials published by Wiley‐VCH GmbH.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - (2024) vom: 09. Sept., Seite e2404590
1. Verfasser: Gebeyehu, Zewdu M (VerfasserIn)
Weitere Verfasser: Mišeikis, Vaidotas, Forti, Stiven, Rossi, Antonio, Mishra, Neeraj, Boschi, Alex, Ivanov, Yurii P, Martini, Leonardo, Ochapski, Michal W, Piccinini, Giulia, Watanabe, Kenji, Taniguchi, Takashi, Divitini, Giorgio, Beltram, Fabio, Pezzini, Sergio, Coletti, Camilla
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2024
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article Cu2O chemical vapor deposition copper film dry pick‐up graphene high‐mobility
Beschreibung
Zusammenfassung:© 2024 The Author(s). Advanced Materials published by Wiley‐VCH GmbH.
The growth of high-quality graphene on flat and rigid templates, such as metal thin films on insulating wafers, is regarded as a key enabler for technologies based on 2D materials. In this work, the growth of decoupled graphene is introduced via non-reducing low-pressure chemical vapor deposition (LPCVD) on crystalline Cu(111) films deposited on sapphire. The resulting film is atomically flat, with no detectable cracks or ripples, and lies atop of a thin Cu2O layer, as confirmed by microscopy, diffraction, and spectroscopy analyses. Post-growth treatment of the partially decoupled graphene enables full and uniform oxidation of the interface, greatly simplifying subsequent transfer processes, particularly dry-pick up - a task that proves challenging when dealing with graphene directly synthesized on metallic Cu(111). Electrical transport measurements reveal high carrier mobility at room temperature, exceeding 104 cm2 V-1 s-1 on SiO2/Si and 105 cm2 V-1 s-1 upon encapsulation in hexagonal boron nitride (hBN). The demonstrated growth approach yields exceptional material quality, in line with micro-mechanically exfoliated graphene flakes, and thus paves the way toward large-scale production of pristine graphene suitable for high-performance next-generation applications
Beschreibung:Date Revised 09.09.2024
published: Print-Electronic
Citation Status Publisher
ISSN:1521-4095
DOI:10.1002/adma.202404590