Synergistic Performance of Thermoelectric and Mechanical in Nanotwinned High-Entropy Semiconductors AgMnGePbSbTe5

Synergistic Performance of Thermoelectric and Mechanical in Nanotwinned High-Entropy Semiconductors AgMnGePbSbTe5

© 2024 Wiley‐VCH GmbH.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - (2024) vom: 09. Sept., Seite e2407982
1. Verfasser: Ma, Zheng (VerfasserIn)
Weitere Verfasser: Luo, Yubo, Dong, Jinfeng, Liu, Yukun, Zhang, Dan, Li, Wang, Li, Chengjun, Wei, Yingchao, Jiang, Qinghui, Li, Xin, Yin, Huabing, Dravid, Vinayak P, Zhang, Qiang, Chen, Shaoping, Yan, Qingyu, Yang, Junyou, Kanatzidis, Mercouri G
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2024
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article AgMnGePbSbTe5 high entropy semiconductor nanotwinned thermoelectric material
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520 |a Introducing nanotwins in thermoelectric materials represents a promising approach to achieving such a synergistic combination of thermoelectric properties and mechanical properties. By increasing configurational entropy, a sharply reduced stacking fault energy in a new nanotwinned high-entropy semiconductor AgMnGePbSbTe5 is reached. Dense coherent nanotwin boundaries in this system provide an efficient phonon scattering barrier, leading to a high figure of merit ZT of ≈2.46 at 750 K and a high average ZT of ≈1.54 (300-823 K) with the presence of Ag2Te nanoprecipitate in the sample. More importantly, owing to the dislocation pinning caused by coherent nanotwin boundaries and the chemical short-range disorder caused by the high configurational entropy effect, AgMnGePbSbTe5 also exhibits robust mechanical properties, with flexural strength of 82 MPa and Vickers hardness of 210 HV 
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650 4 |a AgMnGePbSbTe5 
650 4 |a high entropy semiconductor 
650 4 |a nanotwinned 
650 4 |a thermoelectric material 
700 1 |a Luo, Yubo  |e verfasserin  |4 aut 
700 1 |a Dong, Jinfeng  |e verfasserin  |4 aut 
700 1 |a Liu, Yukun  |e verfasserin  |4 aut 
700 1 |a Zhang, Dan  |e verfasserin  |4 aut 
700 1 |a Li, Wang  |e verfasserin  |4 aut 
700 1 |a Li, Chengjun  |e verfasserin  |4 aut 
700 1 |a Wei, Yingchao  |e verfasserin  |4 aut 
700 1 |a Jiang, Qinghui  |e verfasserin  |4 aut 
700 1 |a Li, Xin  |e verfasserin  |4 aut 
700 1 |a Yin, Huabing  |e verfasserin  |4 aut 
700 1 |a Dravid, Vinayak P  |e verfasserin  |4 aut 
700 1 |a Zhang, Qiang  |e verfasserin  |4 aut 
700 1 |a Chen, Shaoping  |e verfasserin  |4 aut 
700 1 |a Yan, Qingyu  |e verfasserin  |4 aut 
700 1 |a Yang, Junyou  |e verfasserin  |4 aut 
700 1 |a Kanatzidis, Mercouri G  |e verfasserin  |4 aut 
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