Synergistic Performance of Thermoelectric and Mechanical in Nanotwinned High-Entropy Semiconductors AgMnGePbSbTe5

Bibliographische Detailangaben
Veröffentlicht in:	Advanced materials (Deerfield Beach, Fla.). - 1998. - (2024) vom: 09. Sept., Seite e2407982
1. Verfasser:	Ma, Zheng (VerfasserIn)
Weitere Verfasser:	Luo, Yubo, Dong, Jinfeng, Liu, Yukun, Zhang, Dan, Li, Wang, Li, Chengjun, Wei, Yingchao, Jiang, Qinghui, Li, Xin, Yin, Huabing, Dravid, Vinayak P, Zhang, Qiang, Chen, Shaoping, Yan, Qingyu, Yang, Junyou, Kanatzidis, Mercouri G
Format:	Online-Aufsatz
Sprache:	English
Veröffentlicht:	2024
Zugriff auf das übergeordnete Werk:	Advanced materials (Deerfield Beach, Fla.)
Schlagworte:	Journal Article AgMnGePbSbTe5 high entropy semiconductor nanotwinned thermoelectric material

Beschreibung
Zusammenfassung:	© 2024 Wiley‐VCH GmbH. Introducing nanotwins in thermoelectric materials represents a promising approach to achieving such a synergistic combination of thermoelectric properties and mechanical properties. By increasing configurational entropy, a sharply reduced stacking fault energy in a new nanotwinned high-entropy semiconductor AgMnGePbSbTe5 is reached. Dense coherent nanotwin boundaries in this system provide an efficient phonon scattering barrier, leading to a high figure of merit ZT of ≈2.46 at 750 K and a high average ZT of ≈1.54 (300-823 K) with the presence of Ag2Te nanoprecipitate in the sample. More importantly, owing to the dislocation pinning caused by coherent nanotwin boundaries and the chemical short-range disorder caused by the high configurational entropy effect, AgMnGePbSbTe5 also exhibits robust mechanical properties, with flexural strength of 82 MPa and Vickers hardness of 210 HV
Beschreibung:	Date Revised 09.09.2024 published: Print-Electronic Citation Status Publisher
ISSN:	1521-4095
DOI:	10.1002/adma.202407982